Kenji Shiraishi

According to our database, Kenji Shiraishi authored at least 12 papers between 2007 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2018

Atomistic study of SiN based ReRAM with high program/erase cycle endurance.

Keita Yamaguchi, Hiroki Shirakawa, Kenji Shiraishi

IEICE Electron. Express, 2018

Market based embedded Real Time Operation for Distributed Resources and Flexibility.

Bertrand Travacca, Greg Rybka, Kenji Shiraishi

CoRR, 2018

2017

Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories.

Hiroki Shirakawa, Keita Yamaguchi, Masaaki Araidai, Katsumasa Kamiya, Kenji Shiraishi

IEICE Trans. Electron., 2017

2015

Theoretical and Experimental Approaches to Select Resistive Switching Material.

Takeki Ninomiya, Zhiqiang Wei, Shinichi Yoneda, Kenji Shiraishi

IEICE Trans. Electron., 2015

2014

Ab initio modeling of resistive switching mechanism in binary metal oxides.

Blanka Magyari-Köpe, Liang Zhao, Yoshio Nishi, Katsumasa Kamiya, Moon Young Yang, Kenji Shiraishi

Proceedings of the IEEE International Symposium on Circuits and Systemss, 2014

2013

Examination of short calibration problem of Transmission Line Pulse.

Teruo Suzuki, Kenji Shiraishi

IEICE Electron. Express, 2013

2011

An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory.

Akira Otake, Keita Yamaguchi, Katsumasa Kamiya, Yasuteru Shigeta, Kenji Shiraishi

IEICE Trans. Electron., 2011

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor.

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh

IEICE Trans. Electron., 2011

Si nanowire FET and its modeling.

Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet

Sci. China Inf. Sci., 2011

2010

A massively-parallel electronic-structure calculations based on real-space density functional theory.

Jun-ichi Iwata, Daisuke Takahashi, Atsushi Oshiyama, Taisuke Boku, Kenji Shiraishi, Susumu Okada, Kazuhiro Yabana

J. Comput. Phys., 2010

Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot.

Masakazu Muraguchi, Yukihiro Takada, Shintaro Nomura, Tetsuo Endoh, Kenji Shiraishi

IEICE Trans. Electron., 2010

2007

Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films.

Tetsuo Endoh, Kazuyuki Hirose, Kenji Shiraishi

IEICE Trans. Electron., 2007