A. Benoist

According to our database1, A. Benoist authored at least 2 papers in 2015.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2015
Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization.
Proceedings of the 45th European Solid State Device Research Conference, 2015


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