Patrick M. Lenahan

According to our database1, Patrick M. Lenahan authored at least 8 papers between 2007 and 2025.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Awards

IEEE Fellow

IEEE Fellow 2010, "For contributions to understanding of radiation damage and reliabilityof metal-oxide semiconductor devices".

Timeline

Legend:

Book  In proceedings  Article  PhD thesis  Dataset  Other 

Links

On csauthors.net:

Bibliography

2025
Detection of Surface Spins Causing Flux Noise in Quantum Devices Using Electron Spin Resonance.
Proceedings of the IEEE International Conference on Quantum Computing and Engineering, 2025

2023
Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2020
Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance.
Microelectron. Reliab., 2018

2016
Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability.
Microelectron. Reliab., 2016

2015
Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2007
Deep level defects involved in MOS device instabilities.
Microelectron. Reliab., 2007


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