Patrick M. Lenahan

According to our database, Patrick M. Lenahan authored at least 7 papers between 2007 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics.

Patrick M. Lenahan, E. B. Frantz, Sean W. King, Mark A. Anders, S. J. Moxim, James P. Ashton, Kyle J. Myers, M. E. Flatté, N. J. Harmon

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2020

Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation.

James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination.

James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis, Mark A. Anders

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance.

Patrick M. Lenahan, Mark A. Anders, R. J. Waskiewicz, Aivars J. Lelis

Microelectron. Reliab., 2018

2016

Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability.

Michael J. Mutch, Thomas Pomorski, Brad C. Bittel, Corey J. Cochrane, Patrick M. Lenahan, Xin Liu, Robert J. Nemanich, Justin Brockman, Marc French, Markus Kuhn, Benjamin French, Sean W. King

Microelectron. Reliab., 2016

2015

Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC.

Mark A. Anders, Patrick M. Lenahan, Aivars J. Lelis

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2007

Deep level defects involved in MOS device instabilities.

Patrick M. Lenahan

Microelectron. Reliab., 2007