Andreas Kerber

According to our database, Andreas Kerber authored at least 8 papers between 2014 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of five.

2018

Bias temperature instability in scaled CMOS technologies: A circuit perspective.

Andreas Kerber, Tanya Nigam

Microelectron. Reliab., 2018

Cap layer and multi-work-function tuning impact on TDDB/BTI in SOI FinFET devices.

Wen Liu, Andreas Kerber, Fernando Guarin, Claude Ortolland

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Assessment of sense measurement duration on BTI degradation in MG/HK CMOS technologies using a novel stacked transistor test structure.

Andreas Kerber

Microelectron. Reliab., 2017

Material and device innovation impact on reliability for scaled CMOS technologies.

Tanya Nigam, Andreas Kerber, Tian Shen, Rakesh Ranjan, Linjun Cao

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Device to circuit reliability correlations for metal gate/high-k transistors in scaled CMOS technologies.

Andreas Kerber

Microelectron. Reliab., 2016

2015

Enabling Scaling of Advanced CMOS Technologies: A Reliability Perspective.

Tanya Nigam, Andreas Kerber

Proceedings of the 2015 IEEE Computer Society Annual Symposium on VLSI, 2015

2014

Reliability modeling of HK MG technologies.

Tanya Nigam, Andreas Kerber

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, 2014

HTOL SRAM Vmin shift considerations in scaled HKMG technologies.

S. Balasubramanian, Vivek Joshi, Torsten Klick, Randy W. Mann, Joseph Versaggi, Akhilesh Gautam, C. Weintraub, G. Kurz, G. Krause, Andreas Kerber, Biju Parameshwaran, Tanya Nigam

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, 2014