Fernando Guarin

According to our database1, Fernando Guarin authored at least 19 papers between 2013 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2008, "For contributions to semiconductor materials and reliability".

Timeline

Legend:

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Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFET.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022
Excellent RF Product HTOL reliability of 5G mmWave beamformer chip fabricated using GF 45RFSOI technologies.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

6G Roadmap for Semiconductor Technologies: Challenges and Advances.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

CMOS RF reliability for 5G mmWave applications - Challenges and Opportunities.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Self-heating characterization and its applications in technology development.
Proceedings of the 29th IEEE North Atlantic Test Workshop, 2020

A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Thermal Characterization and TCAD Modeling of a Power Amplifier in 45RFSOI for 5G mmWave Applications.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Silicon Based RF Reliability Challenges for 5G Communications.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018
Cap layer and multi-work-function tuning impact on TDDB/BTI in SOI FinFET devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015
Self-heating and its implications on hot carrier reliability evaluations.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs.
Proceedings of the 44th European Solid State Device Research Conference, 2014

2013
A negative differential resistance effect implemented with a single MOSFET from 375 k down to 80 k.
Proceedings of the European Solid-State Device Research Conference, 2013


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