Anthonin Verdy

According to our database, Anthonin Verdy authored at least 4 papers between 2017 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

High temperature stability embedded ReRAM for 2x nm node and beyond.

Gabriel Molas, Giuseppe Piccolboni, Alessandro Bricalli, Anthonin Verdy, I. Naot, Y. Cohen, Amir Regev, I. Naveh, Damien Deleruyelle, Quentin Rafhay, Niccolo Castellani, Lucas Reganaz, Alain Persico, R. Segaud, Jean-François Nodin, Valentina Meli, S. Martin, François Andrieu, Laurent Grenouillet

Proceedings of the IEEE International Memory Workshop, 2022

2018

Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance.

Anthonin Verdy, Gabriele Navarro, Mathieu Bernard, Sophie Chevalliez, Niccolo Castellani, Emmanuel Nolot, Julien Garrione, Pierre Noe, Guillaume Bourgeois, Veronique Sousa, Marie Claire Cyrille, Etienne Nowak

Proceedings of the IEEE International Reliability Physics Symposium, 2018

OTS selector devices: Material engineering for switching performance.

Marie Claire Cyrille, Anthonin Verdy, Gabriele Navarro, Guillaume Bourgeois, Julien Garrione, Mathieu Bernard, C. Sabbione, Pierre Noe, Etienne Nowak

Proceedings of the 2018 International Conference on IC Design & Technology, 2018

2017

Innovative GeS2/Sb2Te3 based phase change memory for low power applications.

Julia Kluge, Anthonin Verdy, Gabriele Navarro, Serge Blonkowski, Veronique Sousa, Sophie Chevalliez, Philippe Kowalczyk, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Niccolo Castellani, Pierre Noe, Luca Perniola

Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017