Benjamin Max

Orcid: 0000-0002-6468-6596

According to our database¹, Benjamin Max authored at least 8 papers between 2018 and 2023.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

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Bibliography

2023

A pseudo-memcapacitive neurotransistor for spiking neural networks.

[BibT_eX]

[DOI]

Proceedings of the 12th International Conference on Modern Circuits and Systems Technologies, 2023

Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes.

[BibT_eX]

[DOI]

Proceedings of the Device Research Conference, 2023

2022

Ferroelectric-based synapses and neurons for neuromorphic computing.

[BibT_eX]

[DOI]

Neuromorph. Comput. Eng., 2022

2021

Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing.

[BibT_eX]

[DOI]

CoRR, 2021

Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2019

Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields.

[BibT_eX]

[DOI]

Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019

Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories.

[BibT_eX]

[DOI]

Proceedings of the Device Research Conference, 2019

2018

Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks.

[BibT_eX]

[DOI]

Proceedings of the 48th European Solid-State Device Research Conference, 2018

Benjamin Max

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