Michael Hoffmann

Affiliations:
  • NaMLab GmbH, Dresden, Germany


According to our database1, Michael Hoffmann authored at least 10 papers between 2017 and 2021.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2021
Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing.
CoRR, 2021

2019
Ferroelectric Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub> memories: device reliability and depolarization fields.
Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019

Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors.
Proceedings of the Device Research Conference, 2019

Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories.
Proceedings of the Device Research Conference, 2019

Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation.
Proceedings of the Device Research Conference, 2019

2018
Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

Domain Formation in Ferroelectric Negative Capacitance Devices.
Proceedings of the 76th Device Research Conference, 2018

Computing with ferroelectric FETs: Devices, models, systems, and applications.
Proceedings of the 2018 Design, Automation & Test in Europe Conference & Exhibition, 2018

2017
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM.
Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017

Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories.
Proceedings of the 47th European Solid-State Device Research Conference, 2017


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