Stefan Slesazeck
Orcid: 0000-0002-0414-0321
According to our database1,
Stefan Slesazeck
authored at least 49 papers
between 2013 and 2023.
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Bibliography
2023
Neuromorph. Comput. Eng., June, 2023
Proceedings of the 18th ACM International Symposium on Nanoscale Architectures, 2023
A Reference-less Sense Amplifier to Sense pA Currents in Ferroelectric Tunnel Junction Memories.
Proceedings of the 12th International Conference on Modern Circuits and Systems Technologies, 2023
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes.
Proceedings of the Device Research Conference, 2023
2022
IEEE Trans. Circuits Syst. I Regul. Pap., 2022
Neuromorph. Comput. Eng., 2022
Neuromorph. Comput. Eng., 2022
Proceedings of the 11th International Conference on Modern Circuits and Systems Technologies, 2022
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022
A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022
Proceedings of the 29th IEEE International Conference on Electronics, Circuits and Systems, 2022
Proceedings of the 29th IEEE International Conference on Electronics, Circuits and Systems, 2022
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022
Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing.
Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022
Proceedings of the Device Research Conference, 2022
2021
IEEE Trans. Circuits Syst. I Regul. Pap., 2021
Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing.
CoRR, 2021
Control Strategies to Optimize Graph Coloring via M-CNNs with Locally-Active NbOx Memristors.
Proceedings of the 10th International Conference on Modern Circuits and Systems Technologies, 2021
Proceedings of the IEEE International Symposium on Circuits and Systems, 2021
Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories.
Proceedings of the IEEE International Reliability Physics Symposium, 2021
Comparative study of usefulness of FeFET, FTJ and ReRAM technology for ternary arithmetic.
Proceedings of the 28th IEEE International Conference on Electronics, 2021
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021
Proceedings of the 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2021
2020
Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2020
2019
IEEE Trans. Circuits Syst. I Regul. Pap., 2019
Ferroelectric Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub> memories: device reliability and depolarization fields.
Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019
Simulation of integrate-and-fire neuron circuits using HfO2-based ferroelectric field effect transistors.
Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, 2019
Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, 2019
Eliminating Charge Sharing in Clocked Logic Gates on the Device Level Employing Transistors with Multiple Independent Inputs.
Proceedings of the 49th European Solid-State Device Research Conference, 2019
Proceedings of the 49th European Solid-State Device Research Conference, 2019
Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory.
Proceedings of the 49th European Solid-State Device Research Conference, 2019
Proceedings of the Device Research Conference, 2019
Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation.
Proceedings of the Device Research Conference, 2019
2018
Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices.
Proceedings of the IFIP/IEEE International Conference on Very Large Scale Integration, 2018
Proceedings of the IEEE International Symposium on Circuits and Systems, 2018
Proceedings of the 2018 International Conference on IC Design & Technology, 2018
Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks.
Proceedings of the 48th European Solid-State Device Research Conference, 2018
Proceedings of the 76th Device Research Conference, 2018
Proceedings of the 2018 Design, Automation & Test in Europe Conference & Exhibition, 2018
2017
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM.
Proceedings of the 17th Non-Volatile Memory Technology Symposium, 2017
Analog memristive and memcapacitive properties of Ti / AI2O3 / Nb2O5 / Ti resistive switches.
Proceedings of the 8th IEEE Latin American Symposium on Circuits & Systems, 2017
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories.
Proceedings of the 47th European Solid-State Device Research Conference, 2017
2016
Proceedings of the IEEE International Symposium on Circuits and Systems, 2016
Proceedings of the 46th European Solid-State Device Research Conference, 2016
2015
IEEE Trans. Circuits Syst. I Regul. Pap., 2015
Proceedings of the 2015 IEEE International Symposium on Circuits and Systems, 2015
Proceedings of the 45th European Solid State Device Research Conference, 2015
2013
Proceedings of the European Solid-State Device Research Conference, 2013