C. F. Tsang

According to our database, C. F. Tsang authored at least 4 papers between 2003 and 2005.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2005

A study of post-etch wet clean on electrical and reliability performance of Cu/low k interconnections.

C. F. Tsang, C. K. Chang, A. Krishnamoorthy, K. Y. Ee, Y. J. Su, H. Y. Li, W. H. Li, L. Y. Wong

Microelectron. Reliab., 2005

Process improvement of 0.13mum Cu/Low K (Black Diamond^TM) dual damascene interconnection.

H. Y. Li, Y. J. Su, C. F. Tsang, S. M. Sohan, V. N. Bliznetsov, L. Zhang

Microelectron. Reliab., 2005

2004

Impact of barrier deposition process on electrical and reliability performance of Cu/CVD low k SiOCH metallization.

C. F. Tsang, C. Y. Li, A. Krishnamoorthy, Y. J. Su, H. Y. Li, L. Y. Wong, W. H. Li, L. J. Tang, K. Y. Ee

Microelectron. J., 2004

2003

Study and improvement of electrical performance of 130 nm Cu/CVD low k SiOCH interconnect related to via etch process.

C. F. Tsang, V. N. Bliznetsov, Y. J. Su

Microelectron. J., 2003