A. S. Oates

According to our database, A. S. Oates authored at least 10 papers between 2001 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2019

Characterization of Critical Peak Current and General Model of Interconnect Systems Under Short Pulse-Width Conditions.

Ming-Hsien Lin, W. S. Chou, Y. T. Yang, A. S. Oates

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Percolation defect nucleation and growth as a description of the statistics of electrical breakdown for gate, MOL and BEOL dielectrics.

Yi Ching Ong, Shou-Chung Lee, A. S. Oates

Proceedings of the IEEE International Reliability Physics Symposium, 2018

BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdown.

Pin-Shiang Chen, Shou-Chung Lee, A. S. Oates, Chee Wee Liu

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Mechanisms of electromigration under AC and pulsed-DC stress in Cu/low-k dual damascene interconnects.

M. H. Lin, A. S. Oates

Proceedings of the IEEE International Reliability Physics Symposium, 2015

On the voltage dependence of copper/low-k dielectric breakdown.

Shou-Chung Lee, A. S. Oates

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2006

Electromigration failure distributions of dual damascene Cu /low - k interconnects.

A. S. Oates, Shou-Chung Lee

Microelectron. Reliab., 2006

2004

Influence of mobility model on extraction of stress dependent source-drain series resistance.

Merlyne M. De Souza, S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Prasad Chaparala

Microelectron. Reliab., 2004

2003

Characterisation of series resistance degradation through charge pumping technique.

S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Merlyne M. De Souza

Microelectron. Reliab., 2003

2001

A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors.

Merlyne M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates

Microelectron. Reliab., 2001

Hot-carrier-Induced Circuit Degradation for 0.18 µm CMOS Technology.

Wei Li, Qiang Li, J. S. Yuan, Joshua McConkey, Yuan Chen, Sundar Chetlur, Jonathan Zhou, A. S. Oates

Proceedings of the 2nd International Symposium on Quality of Electronic Design (ISQED 2001), 2001