Cheoljoong Park

According to our database, Cheoljoong Park authored at least 2 papers between 2020 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput.

Wanik Cho, Chanhui Jeong, Jongwoo Kim, Jongseok Jung, Keunseon Ahn, Jayoon Goo, Sangkyu Lee, Kayoung Cho, Tei Cho, Dauni Kim, Gwan Park, Yushin Ahn, Sooyeol Chai, Gwihan Ko, Sunyoung Jung, Eunwoo Jo, Taehun Park, Jinhyun Ban, Cheoljoong Park, Jae Hyun Park, Sanghoon Oh, Sojin Jeong, Youngjun Kwak, Kyungsoo Jeong, Jinyeop Kim, Minchol Shin, Eunho Yang, Taisik Shin, Youngil Kim, Jiseong Mun, Chanyang Ryu, Huihyeon Park, Changwan Ha, Jong Tai Park, Peng Zhang, Sooyong Park, Rezaul Haque, Hang Tian, Sunghwa Ok, Wonbeom Choi, Junyoun Lim, Dongkyu Yoon, Sechun Park, Wonsun Park, Kichang Gwon, Seungpil Lee, Hwang Huh, Woopyo Jeong, Jungdal Choi

Proceedings of the IEEE International Solid-State Circuits Conference, 2025

2020

13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique.

Hwang Huh, Wanik Cho, Jinhaeng Lee, Yujong Noh, Yongsoon Park, Sunghwa Ok, Jongwoo Kim, Kayoung Cho, Hyunchul Lee, Geonu Kim, Kangwoo Park, Kwanho Kim, Heejoo Lee, Sooyeol Chai, Chankeun Kwon, Hanna Cho, Chanhui Jeong, Yujin Yang, Jayoon Goo, Jangwon Park, Juhyeong Lee, Heonki Kirr, Kangwook Jo, Cheoljoong Park, Hyeonsu Nam, Hyunseok Song, Sangkyu Lee, Woopyo Jeong, Kun-Ok Ahn, Tae-Sung Jung

Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020