Ching-Sung Ho

According to our database, Ching-Sung Ho authored at least 5 papers between 2002 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2013

Revisiting MOSFET threshold voltage extraction methods.

Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Alberto Terán Barrios, Juin J. Liou, Ching-Sung Ho

Microelectron. Reliab., 2013

2010

Integration-based approach to evaluate the sub-threshold slope of MOSFETs.

Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Ching-Sung Ho

Microelectron. Reliab., 2010

2009

Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction.

Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Denise C. Lugo Muñoz, Álvaro D. Latorre Rey, Ching-Sung Ho, Juin J. Liou

Microelectron. Reliab., 2009

2005

An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect.

Ching-Sung Ho, Kuo-Yin Huang, Ming Tang, Juin J. Liou

Microelectron. Reliab., 2005

2002

Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs.

Juin J. Liou, R. Shireen, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Antonio Cerdeira, Xiaofang Gao, Xuecheng Zou, Ching-Sung Ho

Microelectron. Reliab., 2002