Chunzhou Shi

According to our database, Chunzhou Shi authored at least 3 papers between 2024 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

High linearity and high-power of composite component graded-AlGaN/graded-InGaN/ GaN HEMTs.

Qian Yu, Ling Yang, Long Zhang, Chunzhou Shi, Bin Hou, Mei Wu, Meng Zhang, Hao Lu, Xu Zou, Wenze Gao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2026

2024

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure.

Chunzhou Shi, Ling Yang, Meng Zhang, Hao Lu, Mei Wu, Bin Hou, Xuerui Niu, Qian Yu, Wenliang Liu, Wenze Gao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2024

High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation.

Qingyuan Chang, Bin Hou, Ling Yang, Mei Wu, Meng Zhang, Hao Lu, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Qian Yu, Shiming Li, Youjun Zhu, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2024