Qingyuan Chang

According to our database, Qingyuan Chang authored at least 3 papers between 2024 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts.

Mengdi Li, Jiejie Zhu, Sheng Zhang, Bowen Zhang, Yuxi Zhou, Dayan Yuan, Lingjie Qin, Mingchen Zhang, Qingyuan Chang, Chupeng Yi, Ke Wei, Xinyu Liu, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2025

Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT.

Mao Jia, Bin Hou, Ling Yang, Meng Zhang, Mei Wu, Hao Lu, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Qian Xiao, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2025

2024

High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation.

Qingyuan Chang, Bin Hou, Ling Yang, Mei Wu, Meng Zhang, Hao Lu, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Qian Yu, Shiming Li, Youjun Zhu, Xiaohua Ma, Yue Hao

Sci. China Inf. Sci., 2024