Debin Hou

Orcid: 0000-0001-7533-2227

According to our database1, Debin Hou authored at least 21 papers between 2012 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2024
A 94-GHz 16T1R Hybrid Integrated Phased Array With ±50° Scanning Range for High-Date-Rate Communication.
IEEE Trans. Circuits Syst. I Regul. Pap., February, 2024

An Optimization Method for Load Modulation Trajectories in a Millimeter-Wave GaN MMIC Doherty Power Amplifier Design.
IEEE Trans. Circuits Syst. II Express Briefs, January, 2024

2023
A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm P<sub>SAT</sub> and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS.
IEEE J. Solid State Circuits, February, 2023

An Ultra-Wideband Amplifier with A Novel Non- Distributed Butterfly Topology Achieving 2-250 GHz Bandwidth and 4.67 THz GBW in 130nm SiGe BiCMOS.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2023

2022
A Variable Gain Power Amplifier Based on Switched-Capacitor Array With Stable Linearity.
IEEE Trans. Circuits Syst. II Express Briefs, 2022

An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range.
IEEE Trans. Circuits Syst. I Regul. Pap., 2022

W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication.
IEEE J. Solid State Circuits, 2022

E-band transceiver monolithic microwave integrated circuit in a waveguide package for millimeter-wave radio channel emulation applications.
Sci. China Inf. Sci., 2022

A SiGe W-band frequency tripler with 10.5 dBm output power using harmonic suppression technique.
Sci. China Inf. Sci., 2022

2021
A High-Linearity Adaptive-Bias SiGe Power Amplifier for 5G Communication.
IEEE Trans. Circuits Syst. II Express Briefs, 2021

Millimeter-wave wireless communications for home network in fiber-to-the-room scenario.
Frontiers Inf. Technol. Electron. Eng., 2021

A -28.5-dB EVM 64-QAM 45-GHz Transceiver for IEEE 802.11aj.
IEEE J. Solid State Circuits, 2021

Towards 6G wireless communication networks: vision, enabling technologies, and new paradigm shifts.
Sci. China Inf. Sci., 2021

A 94GHz Scalable 2 × 2 Phased-Array Receiver in SiGe BiCMOS for High Data-Rate Communication.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2021

2020
A W-Band 6-Bit Phase Shifter With 7 dB Gain and 1.35° RMS Phase Error in 130 nm SiGe BiCMOS.
IEEE Trans. Circuits Syst. II Express Briefs, 2020

A 143.2-168.8-GHz signal source with 5.6 dBm peak output power in a 130-nm SiGe BiCMOS process.
Sci. China Inf. Sci., 2020

2019
A high-efficiency, high harmonic rejection E-band SiGe HBT frequency tripler for high-resolution radar application.
Sci. China Inf. Sci., 2019

A 280-325 GHz Frequency Multiplier Chain With 2.5 dBm Peak Output Power.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2019

2018
A W-band wideband power amplifier using out-of-phase divider in 0.13-μm SiGe BiCMOS.
Sci. China Inf. Sci., 2018

2014
A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGe BiCMOS for D-band applications.
Proceedings of the 2014 International Symposium on Integrated Circuits (ISIC), 2014

2012
Silicon Based Millimeter Wave and THz ICs.
IEICE Trans. Electron., 2012


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