Yong-Zhong Xiong

According to our database1, Yong-Zhong Xiong authored at least 25 papers between 2008 and 2016.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2016
A Fully-Integrated D-Band Frequency Synthesizer in 0.13-μm SiGe BiCMOS.
J. Circuits Syst. Comput., 2016

A 10 to 170 GHz distributed amplifier using 130-nm SiGe HBTs.
Proceedings of the International Symposium on Integrated Circuits, 2016

2015
A low-pass SPST switch in 65 nm CMOS.
Microelectron. J., 2015

Design of 340 GHz 2× and 4× Sub-Harmonic Mixers Using Schottky Barrier Diodes in Silicon-Based Technology.
Micromachines, 2015

A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology.
Micromachines, 2015

Analysis and Optimization of Cascode Structure in Power Amplifier for X-Band Phase Array Radar Application.
Circuits Syst. Signal Process., 2015

An 890 mW stacked power amplifier using SiGe HBTs for X-band multifunctional chips.
Proceedings of the ESSCIRC Conference 2015, 2015

A 124 to 132.5 GHz frequency quadrupler with 4.4 dBm output power in 0.13μm SiGe BiCMOS.
Proceedings of the ESSCIRC Conference 2015, 2015

220GHz wide-band MEMS switch in standard BiCMOS technology.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2015

D-band down conversion chipset with I-Q outputs using 0.13μm SiGe BiCMOS technology.
Proceedings of the 2015 IEEE 11th International Conference on ASIC, 2015

2014
A 5 GHZ CMOS Power VCO with Novel Frequency-Modulation for RF Transmitter.
Circuits Syst. Signal Process., 2014

A 150-GHz push-push VCO in 0.13-μm SiGe BiCMOS.
Proceedings of the 2014 International Symposium on Integrated Circuits (ISIC), 2014

A compact Ka-band SPDT switch with high isolation.
Proceedings of the 2014 International Symposium on Integrated Circuits (ISIC), 2014

A 330 GHz frequency modulator using 0.13-μm SiGe HBTs.
Proceedings of the 2014 International Symposium on Integrated Circuits (ISIC), 2014

A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGe BiCMOS for D-band applications.
Proceedings of the 2014 International Symposium on Integrated Circuits (ISIC), 2014

A 340 GHz fully integrated transmitter for high-speed communications.
Proceedings of the 2014 International Symposium on Integrated Circuits (ISIC), 2014

Design of a high-performance Millimeter-wave amplifier using specific modeling.
Proceedings of the 19th Asia and South Pacific Design Automation Conference, 2014

2012
A 5-Gb/s Automatic Gain Control Amplifier With Temperature Compensation.
IEEE J. Solid State Circuits, 2012

A SiGe BiCMOS Transmitter/Receiver Chipset With On-Chip SIW Antennas for Terahertz Applications.
IEEE J. Solid State Circuits, 2012

A 9% power efficiency 121-to-137GHz phase-controlled push-push frequency quadrupler in 0.13μm SiGe BiCMOS.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2011
A 60-GHz 1-V Supply Band-Tunable Power Amplifier in 65-nm CMOS.
IEEE Trans. Circuits Syst. II Express Briefs, 2011

A 0.13-μm HBT divide-by-6 injection-locked frequency divider.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2011

A 434GHz SiGe BiCMOS transmitter with an on-chip SIW slot antenna.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2011

2010
Test Structure for Characterization of Low-Frequency Noise in CMOS Technologies.
IEEE Trans. Instrum. Meas., 2010

2008
Design of 60- and 77-GHz Narrow-Bandpass Filters in CMOS Technology.
IEEE Trans. Circuits Syst. II Express Briefs, 2008


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