Dohan Kim
Orcid: 0009-0006-4953-2448Affiliations:
- Yonsei University, Seoul, Korea
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Bibliography
2024
A Charge-Domain 4T2C eDRAM Compute-in-Memory Macro With Enhanced Variation Tolerance and Low-Overhead Data Conversion Schemes.
IEEE Trans. Circuits Syst. II Express Briefs, April, 2024
DPe-CIM: A 4T1C Dual-Port eDRAM Compute-in-Memory for Simultaneous Computing and Refresh with Adaptive Refresh and Data Conversion Reduction Scheme.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2024