Dohan Kim

Orcid: 0009-0006-4953-2448

Affiliations:
  • Yonsei University, Seoul, Korea


According to our database1, Dohan Kim authored at least 3 papers between 2024 and 2026.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

Legend:

Book  In proceedings  Article  PhD thesis  Dataset  Other 

Links

Online presence:

On csauthors.net:

Bibliography

2026
A 3× Offset, 2.9× Power, 1.3× Sensing Time, and 4× Area Reduction Direct Input Transfer Offset Cancel DRAM IO Sense Amplifier With Static Current-Free Pre-Sensing.
IEEE J. Solid State Circuits, March, 2026

2024
A Charge-Domain 4T2C eDRAM Compute-in-Memory Macro With Enhanced Variation Tolerance and Low-Overhead Data Conversion Schemes.
IEEE Trans. Circuits Syst. II Express Briefs, April, 2024

DPe-CIM: A 4T1C Dual-Port eDRAM Compute-in-Memory for Simultaneous Computing and Refresh with Adaptive Refresh and Data Conversion Reduction Scheme.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2024


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