Dohan Kim
Orcid: 0009-0006-4953-2448Affiliations:
- Yonsei University, Seoul, Korea
According to our database1,
Dohan Kim authored at least 3 papers
between 2024 and 2026.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
Online presence:
-
on orcid.org
On csauthors.net:
Bibliography
2026
A 3× Offset, 2.9× Power, 1.3× Sensing Time, and 4× Area Reduction Direct Input Transfer Offset Cancel DRAM IO Sense Amplifier With Static Current-Free Pre-Sensing.
IEEE J. Solid State Circuits, March, 2026
2024
A Charge-Domain 4T2C eDRAM Compute-in-Memory Macro With Enhanced Variation Tolerance and Low-Overhead Data Conversion Schemes.
IEEE Trans. Circuits Syst. II Express Briefs, April, 2024
DPe-CIM: A 4T1C Dual-Port eDRAM Compute-in-Memory for Simultaneous Computing and Refresh with Adaptive Refresh and Data Conversion Reduction Scheme.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2024