Dominique Carisetti

According to our database, Dominique Carisetti authored at least 2 papers between 2009 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2012

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.

Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux

Microelectron. Reliab., 2012

2009

Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs.

Michele Piazza, Christian Dua, Mourad Oualli, Erwan Morvan, Dominique Carisetti, Frédéric Wyczisk

Microelectron. Reliab., 2009