Benoit Lambert

According to our database1, Benoit Lambert authored at least 19 papers between 2001 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2022
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2017
Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging.
Microelectron. Reliab., 2017

2015
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs.
Microelectron. Reliab., 2015

Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing.
Microelectron. Reliab., 2015

Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies.
Microelectron. Reliab., 2015

2014
Proton induced trapping effect on space compatible GaN HEMTs.
Microelectron. Reliab., 2014

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.
Microelectron. Reliab., 2014

2013
Qualification of 50 V GaN on SiC technology for RF power amplifiers.
Microelectron. Reliab., 2013

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.
Microelectron. Reliab., 2013

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.
Microelectron. Reliab., 2013

2012
Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification.
Microelectron. Reliab., 2012

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.
Microelectron. Reliab., 2012

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2010
Reliability of high voltage/high power L/S-band Hbt technology.
Microelectron. Reliab., 2010

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations.
Microelectron. Reliab., 2010

2008
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques.
Microelectron. Reliab., 2008

2002
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs.
Microelectron. Reliab., 2002

2001
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses.
Microelectron. Reliab., 2001


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