Arnaud Curutchet

According to our database1, Arnaud Curutchet authored at least 13 papers between 2003 and 2018.

Collaborative distances:
  • Dijkstra number2 of six.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2018
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices.
Microelectron. Reliab., 2017

A two-step de-embedding method valid up to 110 GHz.
Proceedings of the 29th International Conference on Microelectronics, 2017

2016
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress.
Microelectron. Reliab., 2016

2015
Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes.
Microelectron. Reliab., 2015

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs.
Microelectron. Reliab., 2015

2013
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.
Microelectron. Reliab., 2013

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.
Microelectron. Reliab., 2013

2012
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.
Microelectron. Reliab., 2012

Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2009
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs.
Microelectron. Reliab., 2009

2006
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements.
Microelectron. Reliab., 2006

2003
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.
Microelectron. Reliab., 2003


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