Mourad Oualli

According to our database, Mourad Oualli authored at least 5 papers between 2009 and 2018.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2018

Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes.

Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, Cedric Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, Eric Chartier, C. Potier, Sylvain L. Delage

Microelectron. Reliab., 2018

2014

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.

Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.

Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso

Microelectron. Reliab., 2013

2009

Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs.

Michele Piazza, Christian Dua, Mourad Oualli, Erwan Morvan, Dominique Carisetti, Frédéric Wyczisk

Microelectron. Reliab., 2009

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs.

Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui

Microelectron. Reliab., 2009