Zongyang Hu

According to our database, Zongyang Hu authored at least 6 papers between 2018 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

GaN HEMTs Design and Modeling for 5G.

Yueying Liu, John Wood, Zongyang Hu, Satyaki Ganguly, Jeremy Fisher, Mike Watts, Scott T. Sheppard, Donald A. Gajewski, Basim Noori

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2019

Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm².

Wenshen Li, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing

Proceedings of the Device Research Conference, 2019

Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes.

Wenshen Li, Kazuki Nornoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing

Proceedings of the Device Research Conference, 2019

2018

Degradation of GaN-on-GaN vertical diodes submitted to high current stress.

Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Zongyang Hu, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2018

1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes.

Wenshen Li, Kazuki Nomoto, Zongyang Hu, Nicholas Tanen, Kohei Sasaki, Akito Kuramata, Debdeep Jena, Huili Grace Xing

Proceedings of the 76th Device Research Conference, 2018

Realization of the First GaN Based Tunnel Field-Effect Transistor.

Alexander Chaney, Henryk Turski, Kazuki Nomoto, Qingxiao Wang, Zongyang Hu, Moon J. Kim, Huili Grace Xing, Debdeep Jena

Proceedings of the 76th Device Research Conference, 2018