F. Geenen

According to our database, F. Geenen authored at least 5 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs.

Peter Moens, F. Geenen, M. Avramenko, G. Gomez-Garcia, Kevin Matocha

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements.

Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress.

M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study.

Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.

Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022