Peter Moens

According to our database¹, Peter Moens authored at least 26 papers between 2004 and 2023.

Collaborative distances:

Dijkstra number² of four.
Erdős number³ of four.

Timeline

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Article

PhD thesis

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On csauthors.net:

Bibliography

2023

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability.

[BibT_eX]

[DOI]

Peter Moens

Arno Stockman

Proceedings of the IEEE International Reliability Physics Symposium, 2019

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2017

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.

[BibT_eX]

[DOI]

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Trapping induced parasitic effects in GaN-HEMT for power switching applications.

[BibT_eX]

[DOI]

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Technology and design of GaN power devices.

[BibT_eX]

[DOI]

Proceedings of the 45th European Solid State Device Research Conference, 2015

2012

Influence of charge balance on the robustness of trench-based super junction diodes.

[BibT_eX]

[DOI]

Ana Villamor-Baliarda

Piet Vanmeerbeek

Michele Riccio

Vincenzo d'Alessandro

Microelectron. Reliab., 2012

Wafer scale and reliability investigation of thin HfO<sub>2</sub>·AlGaN/GaN MIS-HEMTs.

[BibT_eX]

[DOI]

Herbert De Vleeschouwer

John M. Parsey

Peter Moens

Microelectron. Reliab., 2012

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.

[BibT_eX]

[DOI]

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

Electric field unbalance for robust floating ring termination.

[BibT_eX]

[DOI]

Ana Villamor-Baliarda

Microelectron. Reliab., 2011

2010

Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2010

2008

Thermal resistance assessment in multi-trenched power devices.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2008

Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS.

[BibT_eX]

[DOI]

Peter Moens

Geert Van den Bosch

Microelectron. Reliab., 2008

Next Generation Smart Power Technologies - Challenges and Innovations Enabling Complex SoC Integration.

[BibT_eX]

[DOI]

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2007

Integration of an SCR in an active clamp.

[BibT_eX]

[DOI]

K. Reynders

Peter Moens

Microelectron. Reliab., 2007

Lifetime modeling of intrinsic gate oxide breakdown at high temperature.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2007

TLP Characterization of large gate width devices.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2007

2004

Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations.

[BibT_eX]

[DOI]

Filip Bauwens

Peter Moens

Microelectron. Reliab., 2004

Evidence for source side injection hot carrier effects on lateral DMOS transistors.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2004

Technology considerations for automotive.

[BibT_eX]

[DOI]

Herman Casier

Peter Moens

Koen Appeltans

Proceedings of the 33rd European Solid-State Circuits Conference, 2004

Peter Moens

Timeline

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