Peter Moens

According to our database1, Peter Moens authored at least 24 papers between 2004 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.



In proceedings 
PhD thesis 




Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors.
Microelectron. Reliab., 2018

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs.
Microelectron. Reliab., 2017

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Trapping induced parasitic effects in GaN-HEMT for power switching applications.
Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Technology and design of GaN power devices.
Proceedings of the 45th European Solid State Device Research Conference, 2015

Influence of charge balance on the robustness of trench-based super junction diodes.
Microelectron. Reliab., 2012

Wafer scale and reliability investigation of thin HfO<sub>2</sub>·AlGaN/GaN MIS-HEMTs.
Microelectron. Reliab., 2012

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Electric field unbalance for robust floating ring termination.
Microelectron. Reliab., 2011

Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices.
Microelectron. Reliab., 2010

Thermal resistance assessment in multi-trenched power devices.
Microelectron. Reliab., 2008

Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS.
Microelectron. Reliab., 2008

Next Generation Smart Power Technologies - Challenges and Innovations Enabling Complex SoC Integration.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

Integration of an SCR in an active clamp.
Microelectron. Reliab., 2007

Lifetime modeling of intrinsic gate oxide breakdown at high temperature.
Microelectron. Reliab., 2007

TLP Characterization of large gate width devices.
Microelectron. Reliab., 2007

Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations.
Microelectron. Reliab., 2004

Evidence for source side injection hot carrier effects on lateral DMOS transistors.
Microelectron. Reliab., 2004