Feng-Min Lee

According to our database, Feng-Min Lee authored at least 5 papers between 2019 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Utilizing 2T SONOS Cell Characteristics for L2/Euclidean Distance Computing - From Unit Cell to Array Operations.

Yu-Hsuan Lin, Po-Hao Tseng, Ming-Hsiu Lee, Yu-Yu Lin, Feng-Min Lee, Dai-Ying Lee, Pei-Ying Du, Chih-Chieh Lin, Teng-Hao Yeh, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu

Proceedings of the IEEE International Memory Workshop, 2025

2024

Bit-Cost-Scalable 3D DRAM Architecture and Unit Cell First Demonstrated with Integrated Gate-Around and Channel-Around IGZO FETs.

Feng-Min Lee, Po-Hao Tseng, Yu-Yu Lin, Yu-Hsuan Lin, Wei-Lun Weng, Nei-Chih Lin, Po-Jung Sung, Chien-Ting Wu, Chih-Chao Yang, Wen-Fa Wu, Chang-Hong Shen, Tuo-Hung Hou, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Reliability Assessment for an In-3D-NAND Approximate Searching Solution.

Po-Hao Tseng, Yu-Hsuan Lin, Feng-Min Lee, Tian-Cig Bo, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

NOR Flash-based Multilevel In-Memory-Searching Architecture for Approximate Computing.

Yu-Hsuan Lin, Po-Hao Tseng, Feng-Min Lee, Ming-Hsiu Lee, Chih-Chang Hsieh, Dai-Ying Lee, Keh-Chung Wang, Chih-Yuan Lu

Proceedings of the IEEE International Memory Workshop, 2022

2019

Embedded Memory: The Future of Emerging Memories.

Feng-Min Lee

Proceedings of the International Symposium on VLSI Design, Automation and Test, 2019