Keh-Chung Wang

According to our database1, Keh-Chung Wang authored at least 20 papers between 1993 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2012, "For contributions to GaAs HBT integrated circuits for high speed data conversion and optical fiber communication systems".

Timeline

Legend:

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In proceedings 
Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
Chip Demonstration of a High-Density (43Gb) and High-Search-Bandwidth (300Gb/s) 3D NAND Based In-Memory Search Accelerator for Ternary Content Addressable Memory (TCAM) and Proximity Search of Hamming Distance.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

SLC and MLC In-Memory-Approximate-Search Solutions in Commercial 48-layer and 96-layer 3D-NAND Flash Memories.
Proceedings of the IEEE International Memory Workshop, 2023

A Simulation Study of Scaling Capability toward 10nm for the 3D Stackable Gate-Controlled Thyristor (GCT) DRAM Device.
Proceedings of the IEEE International Memory Workshop, 2023

2022
In-Memory Approximate Computing Architecture Based on 3D-NAND Flash Memories.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

ICE: An Intelligent Cognition Engine with 3D NAND-based In-Memory Computing for Vector Similarity Search Acceleration.
Proceedings of the 55th IEEE/ACM International Symposium on Microarchitecture, 2022

A 512Gb In-Memory-Computing 3D-NAND Flash Supporting Similar-Vector-Matching Operations on Edge-AI Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022

First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

NOR Flash-based Multilevel In-Memory-Searching Architecture for Approximate Computing.
Proceedings of the IEEE International Memory Workshop, 2022

2021
Design of Computing-in-Memory (CIM) with Vertical Split-Gate Flash Memory for Deep Neural Network (DNN) Inference Accelerator.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2021

Robust Brain-Inspired Computing: On the Reliability of Spiking Neural Network Using Emerging Non-Volatile Synapses.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

First Study of P-Channel Vertical Split-Gate Flash Memory Device with Various Electron and Hole Injection Methods and Potential Future Possibility to Enable Functional Memory Circuits.
Proceedings of the IEEE International Memory Workshop, 2021

Write-In-Place Operation and It's Advantages to Upgrade the 3D AND-type Flash Memory Performances.
Proceedings of the IEEE International Memory Workshop, 2021

2020
Introduction of Non-Volatile Computing In Memory (nvCIM) by 3D NAND Flash for Inference Accelerator of Deep Neural Network (DNN) and the Read Disturb Reliability Evaluation : (Invited Paper).
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2014
A 26-28-Gb/s Full-Rate Clock and Data Recovery Circuit With Embedded Equalizer in 65-nm CMOS.
IEEE Trans. Circuits Syst. I Regul. Pap., 2014

A 48-mW 18-Gb/s fully integrated CMOS optical receiver with photodetector and adaptive equalizer.
Proceedings of the Symposium on VLSI Circuits, 2014

2000
A 10-Gb/s high-isolation, 16×16 crosspoint switch implemented with AlGaAs/GaAs HBT's.
IEEE J. Solid State Circuits, 2000

1996
A packaged broad-band monolithic variable gain amplifier implemented in AlGaAs/GaAs HBT technology.
IEEE J. Solid State Circuits, 1996

1995
A 6-b, 4 GSa/s GaAs HBT ADC.
IEEE J. Solid State Circuits, October, 1995

1993
GaAs-based heterojunction bipolar transistors for very high performance electronic circuits.
Proc. IEEE, 1993


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