Frank Brunner

According to our database, Frank Brunner authored at least 6 papers between 2001 and 2021.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2021

GaN-channel HEMTs with AlN buffer for high-voltage switching.

Oliver Hilt, Frank Brunner, Eldad Bahat-Treidel, Mihaela Wolf, Joachim Würfl

Proceedings of the Device Research Conference, 2021

2016

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.

Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale

Microelectron. Reliab., 2016

2015

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator.

Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl

Proceedings of the 45th European Solid State Device Research Conference, 2015

2011

Reliability issues of GaN based high voltage power devices.

Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska

Microelectron. Reliab., 2011

2003

Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE.

Frank Brunner, A. Braun, Paul Kurpas, J. Schneider, Joachim Würfl, Markus Weyers

Microelectron. Reliab., 2003

2001

Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing.

Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph, Markus Weyers

Microelectron. Reliab., 2001