Clément Fleury

According to our database, Clément Fleury authored at least 10 papers between 2013 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Unfolding the Future with Smart Road Lighting and Sensing.

Adrien Piot, Ales Travnik, Markus Bainschab, Clément Fleury, Takashi Sasaki, Sara Guerreiro, Marcus Baumgart, Dominik Holzmann, Rodrigo Tumolin Rocha, Anton Lagosh, Mohssen Moridi

Proceedings of the 2023 IEEE SENSORS, Vienna, Austria, October 29 - Nov. 1, 2023, 2023

2022

Design of a Slab Tamm Plasmon Resonator Coupled to a Multistrip Array Waveguide for the Mid Infrared.

Gerald Pühringer, Cristina Consani, Reyhaneh Jannesari, Clément Fleury, Florian Dubois, Jasmin Spettel, Thang Duy Dao, Gerald Stocker, Thomas Grille, Bernhard Jakoby

Sensors, 2022

2021

Ultra-Narrow SPP Generation from Ag Grating.

Gerald Stocker, Jasmin Spettel, Thang Duy Dao, Andreas Tortschanoff, Reyhaneh Jannesari, Gerald Pühringer, Parviz Saeidi, Florian Dubois, Clément Fleury, Cristina Consani, Thomas Grille, Elmar Aschauer, Bernhard Jakoby

Sensors, 2021

2019

A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride.

Christian Ranacher, Cristina Consani, Andreas Tortschanoff, Lukas Rauter, Dominik Holzmann, Clément Fleury, Gerald Stocker, Andrea Fant, Herbert Schaunig, Peter Irsigler, Thomas Grille, Bernhard Jakoby

Sensors, 2019

2017

TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs.

Clément Fleury, Guido Notermans, Hans-Martin Ritter, Dionyz Pogany

Microelectron. Reliab., 2017

2016

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.

Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale

Microelectron. Reliab., 2016

2015

ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique.

Matteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany

Microelectron. Reliab., 2015

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications.

Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany

Microelectron. Reliab., 2015

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator.

Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl

Proceedings of the 45th European Solid State Device Research Conference, 2015

2013

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications.

Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany

Microelectron. Reliab., 2013