Dionyz Pogany
Affiliations:- TU Wien, Faculty of Electrical Engineering and Information Technology, Vienna, Austria
According to our database1,
Dionyz Pogany
authored at least 37 papers
between 2001 and 2023.
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Bibliography
2023
A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2018
Microelectron. Reliab., 2018
2017
Microelectron. Reliab., 2017
2016
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.
Microelectron. Reliab., 2016
2015
ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique.
Microelectron. Reliab., 2015
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications.
Microelectron. Reliab., 2015
Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
Proceedings of the 45th European Solid State Device Research Conference, 2015
2013
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications.
Microelectron. Reliab., 2013
2012
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure.
Microelectron. Reliab., 2012
IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors.
Microelectron. Reliab., 2012
Electro-thermal characterization and simulation of integrated multi-trenched XtreMOS<sup>TM</sup> power devices.
Microelectron. J., 2012
2011
Application of transient interferometric mapping method for ESD and latch-up analysis.
Microelectron. Reliab., 2011
Improved thermal management of low voltage power devices with optimized bond wire positions.
Microelectron. Reliab., 2011
2010
Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization.
Microelectron. Reliab., 2010
Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation.
Microelectron. Reliab., 2010
2009
IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures.
Microelectron. Reliab., 2009
Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology.
Microelectron. Reliab., 2009
Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system.
Microelectron. Reliab., 2009
2008
Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications.
Microelectron. Reliab., 2008
2007
Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices.
Microelectron. Reliab., 2007
Backside interferometric methods for localization of ESD-induced leakage current and metal shorts.
Microelectron. Reliab., 2007
Optimization and performance of Al<sub>2</sub>O<sub>3</sub>/GaN metal-oxide-semiconductor structures.
Microelectron. Reliab., 2007
Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping.
Microelectron. Reliab., 2007
2006
Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up.
Microelectron. Reliab., 2006
2005
Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices.
IEEE Trans. Instrum. Meas., 2005
Automated setup for thermal imaging and electrical degradation study of power DMOS devices.
Microelectron. Reliab., 2005
2004
Microelectron. Reliab., 2004
Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress.
Microelectron. Reliab., 2004
2003
A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress.
Microelectron. Reliab., 2003
Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method.
Microelectron. Reliab., 2003
2002
Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development.
Microelectron. Reliab., 2002
Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique.
Microelectron. Reliab., 2002
Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions.
Microelectron. Reliab., 2002
2001
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices.
Microelectron. Reliab., 2001
Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures.
Microelectron. Reliab., 2001