Gangping Yan

According to our database, Gangping Yan authored at least 3 papers between 2020 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO Transistors.

Liang Xiang, Gangping Yan, Yunfei Shi, Hong Yang, Shangbo Yang, Gaobo Xu, Xiaolei Wang, Guilei Wang, Huaxiang Yin, Chao Zhao, Jun Luo, Wenwu Wang

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2020

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations.

Linjie Fan, Jinshun Bi, Kai Xi, Gangping Yan

Sensors, 2020

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin

IEEE Access, 2020