Bo Li
Orcid: 0000-0003-4905-2744Affiliations:
- Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China
- INSA Lyon, Ampere Lab, Villeurbanne, France (PhD 2012)
According to our database1,
Bo Li
authored at least 23 papers
between 2012 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
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Online presence:
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on orcid.org
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on ime.cas.cn
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Bibliography
2024
A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs.
IEEE Trans. Circuits Syst. II Express Briefs, March, 2024
2023
An on-chip integrated current sensor with high precision and large current range for smart power ICs.
Microelectron. J., April, 2023
Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio.
Microelectron. J., April, 2023
Microelectron. J., April, 2023
The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
Design and Experimentation of Inductorless Low-Pass NGD Integrated Circuit in 180-nm CMOS Technology.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2022
Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2022
The Synergetic Effects of Total Ionizing Dose and High Temperature on 180 nm DSOI Technology.
Proceedings of the IEEE Asia Pacific Conference on Circuit and Systems, 2022
2021
SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From -200 °C to +300 °C).
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2021
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design.
Sci. China Inf. Sci., 2021
2020
Sensors, 2020
Soft Error Reliability Evaluation of Nanoscale Logic Circuits in the Presence of Multiple Transient Faults.
J. Electron. Test., 2020
Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.
IEEE Access, 2020
2019
Sci. China Inf. Sci., 2019
Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells.
Proceedings of the 13th IEEE International Conference on ASIC, 2019
2018
Microelectron. Reliab., 2018
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.
Microelectron. Reliab., 2018
Total ionizing dose and single event effects of 1 Mb HfO<sub>2</sub>-based resistive-random-access memory.
Microelectron. Reliab., 2018
2017
Total ionizing dose effects and annealing behaviors of HfO<sub>2</sub>-based MOS capacitor.
Sci. China Inf. Sci., 2017
2012
A Digital Dual-State-Variable Predictive Controller for High Switching Frequency Buck Converter With Improved Σ-Δ DPWM.
IEEE Trans. Ind. Informatics, 2012
J. Low Power Electron., 2012
An FPGA prototype of current and voltage predictive controller for high switching frequency buck converter.
Proceedings of the 38th Annual Conference on IEEE Industrial Electronics Society, 2012