Gaobo Xu

According to our database, Gaobo Xu authored at least 6 papers between 2017 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.

Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang

Adv. Intell. Syst., November, 2023

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.

Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin

Sci. China Inf. Sci., October, 2023

2022

Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions.

Xueqin Yang, Yannan Xu, Jinshun Bi, Kai Xi, Linjie Fan, Lanlong Ji, Gaobo Xu

Sci. China Inf. Sci., 2022

2020

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.

Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang

Sci. China Inf. Sci., 2020

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin

IEEE Access, 2020

2017

Total ionizing dose effects and annealing behaviors of HfO₂-based MOS capacitor.

Yannan Xu, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Ming Liu

Sci. China Inf. Sci., 2017