Huaxiang Yin

Orcid: 0000-0001-8066-6002

According to our database1, Huaxiang Yin authored at least 18 papers between 2015 and 2024.

Collaborative distances:

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2024
Source/drain extension asymmetric counter-doping for suppressing channel leakage in stacked nanosheet transistors.
Microelectron. J., 2024

Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors.
Microelectron. J., November, 2023

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.
Adv. Intell. Syst., November, 2023

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.
Sci. China Inf. Sci., October, 2023

2022
Transfer Learning for Improving Seismic Building Damage Assessment.
Remote. Sens., 2022

Investigation on Contacts Thermal Stability for 3D Sequential Integration.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Prediction of Key Metrics of Stacked Nanosheet nFETs using Genetic Algorithm-based Neural Networks.
Proceedings of the 2022 IEEE International Conference on Integrated Circuits, 2022

2021
Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.
Microelectron. J., 2021

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO<sub>2</sub>/TiN-capping/TiAl gate stacks.
Sci. China Inf. Sci., 2020

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.
Sci. China Inf. Sci., 2020

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.
IEEE Access, 2020

Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018
Process variation dependence of total ionizing dose effects in bulk nFinFETs.
Microelectron. Reliab., 2018

Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.
Microelectron. Reliab., 2018

2015
Gate-All-Around Silicon Nanowire Transistors with channel-last process on bulk Si substrate.
IEICE Electron. Express, 2015


  Loading...