Hao Ding
Orcid: 0000-0002-5240-8839Affiliations:
- Peking University, School of Integrated Circuits, Beijing, China
According to our database1,
Hao Ding authored at least 7 papers
between 2023 and 2026.
Collaborative distances:
Collaborative distances:
Timeline
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Bibliography
2026
A 1.8-ns, 45fJ/bit Time-Domain Sensing Scheme with Offset-Cancelled Resistance-to-Time Converter and 10<sup>-5</sup> BER for Digital RRAM Compute-in-Memory.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2026
An IZO-Based 2T0C Compute-in-Memory Array with Adaptive Read Voltage Boosting for Energy-Efficient Edge AI.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2026
A Sparsity-Aware Reconfigurable Sensing-Quantization Circuit for RRAM-Based Analog Compute-in-Memory.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2026
2025
HRC-CIM: Hybrid RRAM-Capacitor Cell based Compute-in-Memory with High Linearity, Parallelism and Energy Efficiency.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2025
SA-CIM: A 28nm 16Mb RRAM-based Sparsity-Aware Compute-In-Memory Macro for Edge AI Algorithm Processing.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2025
2024
Invited Paper: Design of an RRAM In-Memory Computing Scheme for Target Tracking Applications.
Proceedings of the IEEE International Conference on Integrated Circuits, 2024
2023
Designing high-speed and energy-efficient dynamic comparators using complementary carbon nanotube field-effect transistors.
IEICE Electron. Express, 2023