Heiji Watanabe

According to our database, Heiji Watanabe authored at least 6 papers between 2006 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors.

Yutaka Terao, Takuji Hosoi, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Investigation of reliability of NO nitrided SiC(1100) MOS devices.

Takato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

A Pixel Design of a Branching Ultra-Highspeed Image Sensor.

Nguyen Hoai Ngo, Kazuhiro Shimonomura, Taeko Ando, Takayoshi Shimura, Heiji Watanabe, Kohsei Takehara, Anh Quang Nguyen, Edoardo Charbon, Takeharu Goji Etoh

Sensors, 2021

2020

Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light.

Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M. Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura, Kohsei Takehara, Edoardo Charbon, Takeharu Goji Etoh

Sensors, 2020

2007

Sample tilting technique for preventing electrostatic discharge during high-current FIB gas-assisted etching with XeF₂.

Hirotaka Komoda, Chie Moritani, Kazutaka Takahashi, Heiji Watanabe, Kiyoshi Yasutake

Microelectron. Reliab., 2007

2006

Novel charge neutralization techniques applicable to wide current range of FIB processing in FIB-SEM combined system.

Hirotaka Komoda, Masaaki Yoshida, Yoh Yamamoto, Kouji Iwasaki, Ikuko Nakatani, Heiji Watanabe, Kiyoshi Yasutake

Microelectron. Reliab., 2006