Hongyi Dou

According to our database, Hongyi Dou authored at least 3 papers between 2023 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2024

Self-Assembled TiN-Metal Nanocomposites Integrated on Flexible Mica Substrates towards Flexible Devices.

Juncheng Liu, Yizhi Zhang, Hongyi Dou, Benson Kunhung Tsai, Abhijeet Choudhury, Haiyan Wang

Sensors, August, 2024

Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory.

Z. Lin, Z. Zhang, C. Niu, Hongyi Dou, Ke Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, Daewon Ha, H. Wang, M. A. Alam, P. D. Ye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

2023

First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10¹¹, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability.

Jie Zhang, Zhuocheng Zhang, Zehao Lin, Ke Xu, Hongyi Dou, Bo Yang, Xinghang Zhang, Haiyan Wang, Peide D. Ye

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023