Huixiang Huang

Orcid: 0000-0003-0681-5756

According to our database1, Huixiang Huang authored at least 12 papers between 2013 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
Progressive attention integration-based multi-scale efficient network for medical imaging analysis with application to COVID-19 diagnosis.
Comput. Biol. Medicine, June, 2023

Radiation Tolerant Silicon-on-Insulator MOSFETs Based on Special Neutron Irradiation Process.
Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering, 2023

Design of SJ-IGBT Based on Carrier Storage Layer.
Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering, 2023

Novel Design of an Ultra Compact Software Defined Radio System with High-density Fan-out SiP Technology.
Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering, 2023

2022
An Improved Dense Crowd Detection Algorithm Based on YOLOv5.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022

A Low Power Operational Amplifier Design Based on SOI DTMOS.
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering, 2022

2020
DCCRGAN: Deep Complex Convolution Recurrent Generator Adversarial Network for Speech Enhancement.
CoRR, 2020

2016
Hardening silicon-on-insulator nMOSFETs by multiple-step Si<sup>+</sup> implantation.
Microelectron. Reliab., 2016

2014
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.
Microelectron. Reliab., 2014

Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment.
Microelectron. J., 2014

2013
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.
Microelectron. Reliab., 2013

Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.
Microelectron. J., 2013


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