Hussein Bazzi

Orcid: 0000-0003-3901-1746

According to our database1, Hussein Bazzi authored at least 9 papers between 2017 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2022
STATE: A Test Structure for Rapid Prediction of Resistive RAM Electrical Parameter Variability.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2022

2021
Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability.
J. Electron. Test., 2021

2020
Design of a Novel Hybrid CMOS Non-Volatile SRAM Memory in 130nm RRAM Technology.
Proceedings of the 15th Design & Technology of Integrated Systems in Nanoscale Era, 2020

Resistive RAM SET and RESET Switching Voltage Evaluation as an Entropy Source for Random Number Generation.
Proceedings of the IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, 2020

2019
True random number generation exploiting SET voltage variability in resistive RAM memory arrays.
Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019

An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits.
Proceedings of the 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era, 2019

2018
Design of Hybrid CMOS Non-Volatile SRAM Cells in 130nm RRAM Technology.
Proceedings of the 30th International Conference on Microelectronics, 2018

Novel RRAM CMOS Non-Volatile Memory Cells in 130nm Technology.
Proceedings of the 2018 International Conference on Computer and Applications (ICCA), 2018

2017
A low-noise voltage-controlled ring oscillator in 28-nm FDSOI technology.
Proceedings of the 29th International Conference on Microelectronics, 2017


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