Vincenzo Della Marca

According to our database1, Vincenzo Della Marca authored at least 12 papers between 2012 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
40nm SONOS Embedded Select in Trench Memory.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2021
A Regulated Sensing Solution Based on a Self-reference Principle for PCM + OTS Memory Array.
Proceedings of the VLSI-SoC: Technology Advancement on SoC Design, 2021

A Self-referenced and regulated sensing solution for PCM with OTS selector.
Proceedings of the 29th IFIP/IEEE International Conference on Very Large Scale Integration, 2021

Hot Electron Source Side Injection Comprehension in 40nm eSTM™.
Proceedings of the IEEE International Memory Workshop, 2021

Benchmarking and optimization of trench-based multi-gate transistors in a 40 nm non-volatile memory technology.
Proceedings of the 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era, 2021

2020
AC stress reliability study of a new high voltage transistor for logic memory circuits.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
True random number generation exploiting SET voltage variability in resistive RAM memory arrays.
Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019

2018
Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction.
Microelectron. Reliab., 2018

Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

2014
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories.
Microelectron. Reliab., 2014

2013
Effect of ions presence in the SiOCH inter metal dielectric structure.
Proceedings of the European Solid-State Device Research Conference, 2013

2012
Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability.
J. Low Power Electron., 2012


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