Hyeongdo Choi

According to our database, Hyeongdo Choi authored at least 2 papers between 2014 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

30.1 A 28Gb/mm²4XX-Layer 1Tb 3b/Cell WF-Bonding 3D-NAND Flash with 5.6Gb/s/Pin IOs.

Sang-Soo Park, Jaedoeg Lyu, Myungjun Kim, Jaeyun Lee, Youngsun Song, Chungho Yu, Makoto Hirano, Yongseok Kwon, Jonghoon Park, Hojoon Kim, Daein Lee, Donghyun Seo, Byungrok Go, Seoyoon Jeon, Yoonjee Kim, Doo-Hyun Kim, Youngmin Jo, Hyun-Jun Yoon, Junehong Park, In-Mo Kim, Sunghoon Kim, Hokil Lee, Je-Hyeon Yu, Sanglok Kim, Hwan-Seok Ku, Jungmin Seo, Jindo Byun, Seunghyeon Yun, Kyoungtae Kang, Seung-Beom Kim, Yohan Lee, Yongkyu Lee, Kyung-Hwa Kang, Hanjun Lee, YoungHwan Ryu, Hyundo Kim, Wontae Kim, Hyeongdo Choi, Juho Jeon, Ansoo Park, Raehyun Song, Jae-Hwan Kim, Jungsoo Kim, Hwaseok Lee, Mookyung Lee, Jae-Ick Son, Jiho Cho, Moosung Kim, Jae-Woo Im, Jongmin Park, Hyuckjoon Kwon, Youngdon Choi, Chiweon Yoon, Seungjae Lee, Kiwhan Song, Sunghoi Hur

Proceedings of the IEEE International Solid-State Circuits Conference, 2025

2014

A vertical power MOSFET with the extended trench oxide.

Hyeongdo Choi, Doohyung Cho, Gilyong Song, Kwangsoo Kim

Proceedings of the International Conference on Electronics, Information and Communications, 2014