Moosung Kim
Affiliations:- Samsung, Seoul, South Korea
According to our database1,
Moosung Kim
authored at least 15 papers
between 2012 and 2023.
Collaborative distances:
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Bibliography
2023
When Crowd Meets Persona: Creating a Large-Scale Open-Domain Persona Dialogue Corpus.
CoRR, 2023
A 3.0 Gb/s/pin 4<sup>th</sup> generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023
2022
A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2019
IEEE Trans. Very Large Scale Integr. Syst., 2019
2018
IEEE J. Solid State Circuits, 2018
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018
2017
IEEE J. Solid State Circuits, 2017
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
2016
IEEE J. Solid State Circuits, 2016
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016
WL under-driving scheme with decremental step voltage and incremental step time for high-capacity NAND flash memory.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2016
2015
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015
2014
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2012
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012