Hyeongsun Hong

According to our database, Hyeongsun Hong authored at least 4 papers between 2012 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

5.5 A 2.1e^- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology.

Jaekyu Lee, Seung Sik Kim, In-Gyu Baek, Heesung Shim, Taehoon Kim, Taehyoung Kim, Jungchan Kyoung, Dongmo Im, Jinyong Choi, KeunYeong Cho, Daehoon Kim, Haemin Lim, Min-Woong Seo, JuYoung Kim, Doowon Kwon, Jiyoun Song, Jiyoon Kim, Minho Jang, Joosung Moon, Hyunchul Kim, Chong Kwang Chang, JinGyun Kim, Kyoungmin Koh, Hanjin Lim, JungChak Ahn, Hyeongsun Hong, Kyupil Lee, Ho-Kyu Kang

Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology.

Hyunchul Kim, Jongeun Park, Insung Joe, Doowon Kwon, Joo Hyoung Kim, Dongsuk Cho, Taehun Lee, Changkyu Lee, Haeyong Park, Soojin Hong, Chongkwang Chang, Jingyun Kim, Hanjin Lim, Youngsun Oh, Yitae Kim, Seungjoo Nah, Sangil Jung, Jaekyu Lee, JungChak Ahn, Hyeongsun Hong, Kyupil Lee, Ho-Kyu Kang

Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

2017

The improvement of HEIP immunity using STI engineering at DRAM.

Seung Uk Han, Youngyoun Lee, Yongdoo Kim, Jemin Park, Junhee Lim, Satoru Yamada, Hyeongsun Hong, Kyupil Lee, Gyoyoung Jin, Eunseung Jung

Microelectron. Reliab., 2017

2012

Novel Deep Trench Buried-Body-Contact (DBBC) of 4F² cell for sub 30nm DRAM technology.

Youngseung Cho, Yoosang Hwang, Huijung Kim, Eunok Lee, Soojin Hong, Hyun-Woo Chung, Daeik Kim, Jinyoung Kim, Yong Chul Oh, Hyeongsun Hong, Gyo-Young Jin, Chilhee Chung

Proceedings of the 2012 European Solid-State Device Research Conference, 2012