Gyo-Young Jin

According to our database1, Gyo-Young Jin authored at least 13 papers between 1991 and 2019.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

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Bibliography

2019
A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking.
IEEE J. Solid State Circuits, 2019

2017
A 1.2 V 20 nm 307 GB/s HBM DRAM With At-Speed Wafer-Level IO Test Scheme and Adaptive Refresh Considering Temperature Distribution.
IEEE J. Solid State Circuits, 2017



Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices.
Proceedings of the 2017 IEEE International Symposium on High Performance Computer Architecture, 2017

2016
18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

18.1 A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI monitor, jitter reduction techniques and improved power distribution.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

Design of non-contact 2Gb/s I/O test methods for high bandwidth memory (HBM).
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2016

2015
A 6.4Gb/s/pin at sub-1V supply voltage TX-interleaving technique for mobile DRAM interface.
Proceedings of the Symposium on VLSI Circuits, 2015

The classification methodology of chip quality using canonical correlation analysis-based variable selection on chip level data.
Proceedings of the 2015 IEEE International Conference on Industrial Engineering and Engineering Management, 2015

2012
Novel Deep Trench Buried-Body-Contact (DBBC) of 4F<sup>2</sup> cell for sub 30nm DRAM technology.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2010
A 31 ns Random Cycle VCAT-Based 4F <sup>2</sup> DRAM With Manufacturability and Enhanced Cell Efficiency.
IEEE J. Solid State Circuits, 2010

1991
Mixed particle Monte Carlo method for deep submicron semiconductor device simulator.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1991


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