Jérome Biscarrat

According to our database, Jérome Biscarrat authored at least 3 papers between 2017 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2021

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2018

Study of forward AC stress degradation of GaN-on-Si Schottky diodes.

Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, Fred Gaillard

Microelectron. Reliab., 2018

2017

On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes.

William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, Gilles Reimbold

Proceedings of the 47th European Solid-State Device Research Conference, 2017