Gilles Reimbold

According to our database, Gilles Reimbold authored at least 18 papers between 2001 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors.

Xavier Garros, Antoine Laurent, Alexandre Subirats, X. Federspiel, E. Vincent, Gilles Reimbold

Microelectron. Reliab., 2018

A new method for quickly evaluating reversible and permanent components of the BTI degradation.

Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K.

Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello

Microelectron. Reliab., 2017

On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes.

William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, Gilles Reimbold

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Drain current model for short-channel triple gate junctionless nanowire transistors.

Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello

Microelectron. Reliab., 2016

Analog performance of strained SOI nanowires down to 10K.

Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Physically-based extraction methodology for accurate MOSFET degradation assessment.

Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2015

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology.

Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices.

Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond

Proceedings of the 45th European Solid State Device Research Conference, 2015

Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model.

J. Pelloux-Prayer, Mikaël Cassé, François Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes.

Guillaume Besnard, Xavier Garros, François Andrieu, P. Nguyen, W. van den Daele, P. Reynaud, Walter Schwarzenbach, D. Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs.

Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs.

Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.

Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2009

Process dependence of BTI reliability in advanced HK MG stacks.

Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, François Martin, Claudia Wiemer, F. Boulanger

Microelectron. Reliab., 2009

2007

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.

Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin

Microelectron. Reliab., 2007

Accurate determination of flat band voltage in advanced MOS structure.

Charles Leroux, Gérard Ghibaudo, Gilles Reimbold

Microelectron. Reliab., 2007

2001

Plasma charging damage mechanisms and impact on new technologies.

Gilles Reimbold, T. Poiroux

Microelectron. Reliab., 2001