Marie-Anne Jaud

According to our database, Marie-Anne Jaud authored at least 7 papers between 2010 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited).

William Vandendaele, Camille Leurquin, R. Lavieville, Marie-Anne Jaud, Abygaël Viey, Romain Gwoziecki, B. Mohamad, E. Nowak, A. Constant, Ferdinando Iucolano

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2021

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface.

B. Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, François Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, C. Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT.

William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, A. Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, Fred Gaillard

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes.

William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, Gilles Reimbold

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2010

32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit.

Olivier Thomas, Jean-Philippe Noel, Claire Fenouillet-Béranger, Marie-Anne Jaud, J. Dura, P. Perreau, Frédéric Boeuf, François Andrieu, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Andrei Vladimirescu, Amara Amara

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2010), May 30, 2010