Jean Coignus

According to our database, Jean Coignus authored at least 12 papers between 2015 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited).

Laurent Grenouillet, Justine Barbot, J. Laguerre, Simon Martin, Catherine Carabasse, M. Louro, Messaoud Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, Thomas Magis, Carine Jahan, François Andrieu, Jean Coignus

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes.

J. Laguerre, Marc Bocquet, Olivier Billoint, S. Martin, Jean Coignus, Catherine Carabasse, Thomas Magis, T. Dewolf, François Andrieu, Laurent Grenouillet

Proceedings of the IEEE International Memory Workshop, 2023

2022

Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements.

Justine Barbot, Jean Coignus, Nicolas Vaxelaire, Catherine Carabasse, Olivier Glorieux, Messaoud Bedjaoui, François Aussenac, François Andrieu, François Triozon, Laurent Grenouillet

Proceedings of the 48th IEEE European Solid State Circuits Conference, 2022

2021

Ferroelectric Tunneling Junctions for Edge Computing.

Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philipp Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck

Proceedings of the IEEE International Symposium on Circuits and Systems, 2021

Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.

Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study.

Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions.

Riccardo Fontanini, Justine Barbot, Mattia Segatto, Suzanne Lancaster, Quang T. Duong, Francesco Driussi, Laurent Grenouillet, François Triozon, Jean Coignus, Thomas Mikolajick, Stefan Slesazeck, David Esseni

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2017

Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology.

Giulio Torrente, Jean Coignus, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2017

Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory.

Adam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus, Luca Perniola, Francis Balestra

Microelectron. Reliab., 2017

Thermal laser attack and high temperature heating on HfO2-based OxRAM cells.

Alexis Krakovinsky, Marc Bocquet, Romain Wacquez, Jean Coignus, Jean-Michel Portal

Proceedings of the 23rd IEEE International Symposium on On-Line Testing and Robust System Design, 2017

Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices.

Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

Physically-based extraction methodology for accurate MOSFET degradation assessment.

Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo

Microelectron. Reliab., 2015