Joff Derluyn

According to our database, Joff Derluyn authored at least 3 papers between 2013 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2016

Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics.

Michael Knetzger, Elke Meissner, Joff Derluyn, Marianne Germain, Jochen Friedrich

Microelectron. Reliab., 2016

2015

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications.

Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany

Microelectron. Reliab., 2015

2013

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications.

Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany

Microelectron. Reliab., 2013